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Silicon-Power Releases 2GB DDR3 1066/ 1333 Unbuffered DIMM
Silicon-Power releases its latest DDR3 memory modules – 2GB DDR3 1066/ 1333 Unbuffered DIMM. DDR3 has higher speed and bandwidth than DDR2 memory modules and reduces power consumption by 30% compared to the DDR2. Furthermore, its ASR (Automatic Self-Refresh) design can decrease the refreshing frequency of memory modules, thus successfully reduce the temperature and power consumption. Due to more and new platforms of standard memory are getting ready, Silicon-Power's 2GB DDR3 1066/ 1333 Unbuffered DIMM are the best choices of memory module for high-performance system. Silicon-Power's 2GB DDR3 1066/ 1333 Unbuffered DIMM are manufactured by selected chips which passed by strict quality testing. It complies with JEDEC?the Joint Electron Device Engineering Council?standard, operates at CL7/ CL9 timings at its default 1.5 voltages and equips with high compatibility and stability. Silicon-Power's 2GB DDR3 1066/ 1333 Unbuffered DIMM provide better system stability and reliability, and they offer life time warranty of the most trustworthy choice for all consumers.
DDR3 1066 Unbuffered DIMM 2GB
Feature
- Lower power consumption
- High compatibility and reliability with Montevina platform
- High performance
- High Bandwidth – 8.5GB/sec
- Up to 1Gb component available, max. 2GB
- JEDEC standard design
- RoHS approved
- Lifetime warranty
- Capacity: 2GB
- Number of Pin: 240 pin
- Speed (Mbps): 1066
- PCB Layer: 6 layer
- VDD / VDDQ: 1.5V ± 0.075 V
- Module Bandwidth: 8.5GB/sec
- CL: 7
Feature
- Lower power consumption
- High compatibility and reliability with Montevina platform
- High performance
- High Bandwidth – 10.7GB/sec
- Up to 1Gb component available, max. 2GB
- JEDEC standard design
- RoHS approved
- Lifetime warranty
- Capacity: 2GB
- Number of Pin: 240 pin
- Speed (Mbps): 1333
- PCB Layer: 6 layer
- VDD / VDDQ: 1.5V ± 0.075 V
- Module Bandwidth: 10.7GB/sec
- CL: 9
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